The escalating demand for cost-effective, flexible, and solution-processed materials in infrared (IR) photodetection presents a compelling alternative to current epitaxially grown optoelectronic technology. Colloidal quantum dots (CQDs) have emerged as a versatile platform for optoelectronic device fabrication, offering affordability, low-temperature synthesis, and scalability. Specifically, mercury chalcogenide CQDs exhibit notable intraband absorption in the mid-IR region. In this study, we explore an intraband HgSe-HgTe CQD photodetector structure tailored for mid-IR light detection. Through numerical optimization, we engineer detectivity by varying key design parameters—the film doping density, CQD diameter, and number of periods in the active layer—under different temperatures and biases. Results indicate that, at 60 K and 1 V bias, our optimally designed HgSe-HgTe CQD IR photodetector attains a peak detectivity of 8.14×1010 Jones for a film doping density of 1019 cm−3 of HgSe CQDs, 9.34×1010 Jones for HgSe CQDs with a 4.8 nm diameter, and 8.72×1010 Jones for 9 periods of HgSe-HgTe CQDs.

中文翻译：

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通过 HgSe-HgTe 胶体量子点的结构参数工程增强中红外光电探测器的探测能力

红外 (IR) 光电探测领域对经济高效、灵活和溶液处理材料的需求不断增长，为当前外延生长光电技术提供了一种引人注目的替代方案。胶体量子点 (CQD) 已成为光电器件制造的多功能平台，具有经济性、低温合成和可扩展性。具体而言，汞硫族化物 CQD 在中红外区域表现出显着的带内吸收。在这项研究中，我们探索了一种专为中红外光检测而设计的带内 HgSe-HgTe CQD 光电探测器结构。通过数值优化，我们通过在不同温度和偏置下改变关键设计参数（薄膜掺杂密度、CQD 直径和有源层周期数）来设计探测率。结果表明，在 60 K 和 1 V 偏压下，我们优化设计的 HgSe-HgTe CQD 红外光电探测器对于薄膜掺杂密度为 1019 cm−3 的 HgSe CQD 获得了 8.14×1010 Jones 的峰值检测率，对于 HgSe 获得了 9.34×1010 Jones 的峰值检测率CQD 的直径为 4.8 nm，HgSe-HgTe CQD 的 9 个周期的琼斯为 8.72×1010。