The article aims to investigate the effect of doping source temperature on the crystal quality of thin films. By changing the temperature of the tin source, a single crystal gallium oxide film was deposited on C-plane sapphire using the MOCVD. The results indicate that the decrease in tin source temperature makes it easier for tin atoms to replace Ga atoms at lattice sites and reduces damage to the lattice. At −20 ℃ tin source, the doped thin film not only had minimum full width at half maxima of 2.04° and a roughness of 4.45 nm, but also the ratio of photocurrent to dark current of the photodetector reached the highest of 526, and the rise and fall time responses achieved the lowest of 4.81 s and 5.24 s, respectively. Our work can optimize the crystal quality of doped thin films and the photodetectors performance by controlling the tin source temperature.

本文旨在研究掺杂源温度对薄膜晶体质量的影响。通过改变锡​​源的温度，使用MOCVD在C面蓝宝石上沉积单晶氧化镓薄膜。结果表明，锡源温度的降低使得锡原子更容易取代晶格位点的Ga原子，减少了对晶格的损伤。在-20 ℃锡源下，掺杂薄膜不仅最小半峰全宽为2.04°，粗糙度为4.45 nm，而且光电探测器的光电流与暗电流之比达到最高526，上升和下降时间响应分别达到最低的 4.81 s 和 5.24 s。我们的工作可以通过控制锡源温度来优化掺杂薄膜的晶体质量和光电探测器的性能。