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A Terahertz Monostatic Transceiver in 90-nm SiGe BiCMOS
IEEE Transactions on Terahertz Science and Technology ( IF 3.2 ) Pub Date : 2023-11-02 , DOI: 10.1109/tthz.2023.3329458 Christoph Mangiavillano 1 , Alexander Kaineder 1 , Klaus Aufinger 2 , Andreas Stelzer 1
IEEE Transactions on Terahertz Science and Technology ( IF 3.2 ) Pub Date : 2023-11-02 , DOI: 10.1109/tthz.2023.3329458 Christoph Mangiavillano 1 , Alexander Kaineder 1 , Klaus Aufinger 2 , Andreas Stelzer 1
Affiliation
A combined common collector harmonic mixer and frequency multiplier is designed to operate at the fourth harmonic in a transceiver at around 0.88 THz in a 90-nm SiGe bipolar CMOS technology with an $f_{T}$
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$f_{\max}$ of 300/480 GHz. The transceiver occupies a chip area of 1.35 $\text{mm}^\text{2}$ with a current consumption of 144 mA when connected to a 3.3-V supply. Measurements reveal an effective isotropic radiated power of $-$
30 dBm at 0.888 THz and a system receiver conversion gain of $-$
4 dB as well as a single-sideband noise figure of 57 dB at 0.912 THz.
中文翻译:
采用 90 nm SiGe BiCMOS 的太赫兹单站收发器
组合式共集电极谐波混频器和倍频器设计用于在收发器中以 0.88 THz 左右的频率运行,采用 90 nm SiGe 双极 CMOS 技术,具有$f_{T}$
/
$f_{\最大}$ 300/480 GHz。收发器占用芯片面积1.35$\text{mm}^\text{2}$ 连接至 3.3V 电源时,电流消耗为 144mA。测量揭示了有效各向同性辐射功率$-$
0.888 THz 时为 30 dBm,系统接收器转换增益为$-$
4 dB,0.912 THz 时的单边带噪声系数为 57 dB。
更新日期:2023-11-02
中文翻译:
采用 90 nm SiGe BiCMOS 的太赫兹单站收发器
组合式共集电极谐波混频器和倍频器设计用于在收发器中以 0.88 THz 左右的频率运行,采用 90 nm SiGe 双极 CMOS 技术,具有