This work presents the molybdenum di-sulphide three-phase bridge rectifier integrated circuit utilizing the novel self-switching diode. The self-switching diode has a planar architecture having I-V behavior similar to an ideal diode. The structure of SSD is utilized to design single phase and three phase rectifiers. The performance in terms of rectification efficiency, total harmonic distortion, ripple factor and cut-off frequency has been evaluated and compared for both single and three phase SSDBR. The three-phase self-switching diode bridge rectifier (3P-SSDBR) has a cut-off frequency of ∼400 MHz with minimum total harmonic distortion (THD) and ripple factor (RF) of 4.73% and 0.59, respectively. While, the single phase self-switching diode bridge rectifier (1P-SSDBR) has a cut-off frequency of ∼300 MHz with minimum total harmonic distortion (THD) and ripple factor (RF) of 47.86% and 1.94, respectively. Further, to validate the obtained results, the simulation models have been calibrated with experimental and theoretical findings.

中文翻译：

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基于 MoS2 自开关二极管的低功率单相和三相桥式整流器

这项工作提出了利用新型自开关二极管的二硫化钼三相桥式整流集成电路。自开关二极管具有平面结构IV 行为类似于理想二极管。利用SSD的结构来设计单相和三相整流器。对单相和三相 SSDBR 的整流效率、总谐波失真、纹波系数和截止频率方面的性能进行了评估和比较。三相自开关二极管桥式整流器 (3P-SSDBR) 的截止频率约为 400 MHz，最小总谐波失真 (THD) 和纹波系数 (RF) 分别为 4.73% 和 0.59。同时，单相自开关二极管桥式整流器 (1P-SSDBR) 的截止频率约为 300 MHz，最小总谐波失真 (THD) 和纹波系数 (RF) 分别为 47.86% 和 1.94。此外，为了验证所获得的结果，模拟模型已根据实验和理论结果进行了校准。