The patterning of silicon and silicon oxide nanocones onto the surfaces of devices introduces interesting phenomena such as anti-reflection and super-transmissivity. While silicon nanocone formation is well-documented, current techniques to fabricate silicon oxide nanocones either involve complex fabrication procedures, non-deterministic placement, or poor uniformity. Here, we introduce a single-mask dry etching procedure for the fabrication of sharp silicon oxide nanocones with smooth sidewalls and deterministic distribution using electron beam lithography. Silicon oxide films deposited using plasma-enhanced chemical vapor deposition are etched using a thin alumina hard mask of selectivity > 88, enabling high aspect ratio nanocones with smooth sidewalls and arbitrary distribution across the target substrate. We further introduce a novel multi-step dry etching technique to achieve ultra-sharp amorphous silicon oxide nanocones with tip diameters of ~10 nm. The processes presented in this work may have applications in the fabrication of amorphous nanocone arrays onto arbitrary substrates or as nanoscale probes.

中文翻译：

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尖锐 SiOx 纳米锥的单掩模制造

硅和氧化硅纳米锥在器件表面的图案化引入了有趣的现象，例如抗反射和超透射率。虽然硅纳米锥的形成已有充分记录，但目前制造氧化硅纳米锥的技术要么涉及复杂的制造程序、不确定的放置，要么均匀性差。在这里，我们介绍了一种单掩模干法蚀刻程序，用于使用电子束光刻制造具有光滑侧壁和确定性分布的尖锐氧化硅纳米锥。使用等离子体增强化学气相沉积沉积的氧化硅薄膜使用选择性 > 88 的薄氧化铝硬掩模进行蚀刻，从而实现具有光滑侧壁和在目标基板上任意分布的高纵横比纳米锥。我们进一步介绍了一种新颖的多步干法蚀刻技术，以实现尖端直径约为 10 nm 的超锋利非晶氧化硅纳米锥。这项工作中提出的工艺可用于在任意基底上制造非晶纳米锥阵列或作为纳米级探针。