Impact of process parameters variation on noise and linearity performances of GC-JL-GAA MOSFET,International Journal of Electronics

当前位置： X-MOL 学术 › Int. J. Electron. › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Impact of process parameters variation on noise and linearity performances of GC-JL-GAA MOSFET
International Journal of Electronics ( IF 1.3 ) Pub Date : 2024-02-05 , DOI: 10.1080/00207217.2024.2312560
Vidyadhar Gupta ₁ , Amit Kumar Pandey ₂ , Abhinav Gupta ₃ , Vedvrat ₁ , Tarun Kumar Gupta ₄

Affiliation

The short channel effects are improved in GC-JL-GAA MOSFETs by raising the channel’s graded doping level. The noise and linearity of the device plays a crucial role in RFIC circuit applications. Th...

中文翻译：