Abstract

Chalcogenide vitreous semiconductors (ChVSs) are of both fundamental and applied interest as materials in which reversible structural transformations within the amorphous phase and phase transitions to the crystalline state can be effectively implemented and various microstructures and nanostructures can be obtained as a result of external effects. One of the most promising methods for such ChVS modifications is the pulsed-laser-irradiation technique, which is a noncontact technology of local impact and makes it possible to change the structural, optical, and electrical properties of samples in a wide range. This includes methods based on the precision formation of a surface microrelief and nanorelief, and high contrast in the conductivity and refractive index between the crystalline and amorphous phases. This work reviews key publications on the structural modification of thin films from the most widely studied binary and ternary ChVS compounds (As₂S₃, As₂Se₃, Ge₂Sb₂Te₅, etc.) to show the use of irradiated samples as metasurfaces for photonic applications and promising phase-change data storage.

中文翻译：

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硫系玻璃半导体薄膜中的结构转变以及微结构和纳米结构的形成

摘要

硫系玻璃半导体（ChVSs）作为一种材料，具有重要的基础和应用意义，其中可以有效地实现非晶相内的可逆结构转变和向晶态的相变，并且可以通过外部效应获得各种微结构和纳米结构。这种 ChVS 修饰最有前途的方法之一是脉冲激光照射技术，这是一种局部影响的非接触技术，可以在大范围内改变样品的结构、光学和电学性质。这包括基于表面微浮雕和纳米浮雕的精确形成以及结晶相和非晶相之间的电导率和折射率的高对比度的方法。这项工作回顾了有关最广泛研究的二元和三元 ChVS 化合物（As ₂ S ₃、As ₂ Se ₃、Ge ₂ Sb ₂ Te ₅等）薄膜结构改性的重要出版物，以展示辐照样品的使用作为光子应用和有前途的相变数据存储的超表面。