Light Emitting Diodes (LEDs) are the key to new generation displays. New semiconductor electron–hole recombination layer is the key to high-performance LEDs. Although all-inorganic quantum dot (QD) materials have the advantages of wide color gamut and narrow emission peaks, they face issues of toxicity of heavy metal ions and stability of QDs, the synthesis method is highly polluting and difficult to achieve industrial production. Thereby, lead-free all-inorganic phosphor with narrow FWHM needs to be explored. A new synthesis method is required to be investigated. All-inorganic Mn²⁺ bromide (Cs₃MnBr₅) is easy to synthesize and has low toxicity and superior luminescent properties. However, most synthesis methods rely on liquid-phase reaction systems and cannot achieve highly efficient synthesis. High-energy ball milling is an efficient method and has enormous potential for industrial production. In this paper, this method is used to synthesize Cs₃MnBr₅, and then Cs/Mn ratio, ball milling time, and ligand usage are studied. Furthermore, a new phase transformation of all-inorganic Mn²⁺ bromide is discovered, and the mechanism of high-energy ball milling is interpreted combining with phase transformation process. This article brings a new method to synthesis of all-inorganic Mn²⁺ bromide, explains the mechanism of ball milling, and expands the phase transformation of all-inorganic Mn²⁺ bromide.

中文翻译：

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高能球磨合成全无机无铅绿光Cs3MnBr5晶体

发光二极管 (LED) 是新一代显示器的关键。新型半导体电子空穴复合层是高性能LED的关键。全无机量子点（QD）材料虽然具有宽色域和窄发射峰的优点，但面临重金属离子毒性和量子点稳定性问题，且合成方法污染严重，难以实现工业化生产。因此，需要探索具有窄半峰宽的无铅全无机荧光粉。需要研究新的合成方法。全无机溴化锰⁽ Cs ₃ MnBr ₅ )易于合成、毒性低、发光性能优越。然而，大多数合成方法依赖于液相反应体系，无法实现高效合成。高能球磨是一种高效的方法，具有巨大的工业生产潜力。本文采用该方法合成Cs ₃ MnBr ₅，并对Cs/Mn比、球磨时间、配体用量等进行了研究。进一步发现了全无机溴化Mn ²⁺的新相变，并结合相变过程解释了高能球磨机理。本文提出了全无机溴化锰^{2+的合成新方法，解释了球磨的机理，并拓展了全无机溴化锰2+}的相变。