Cu₂ZnSnS₄ (CZTS) films were produced in a one-stage depositing spray pyrolysis technique instead of that needed post-sulfurization treatment. X-ray diffraction (XRD) has been used to identify crystal structure of studied films before and after E.B. irradiation. The presence of (112) as a preferred orientation indicates the kesterite phase structure of CZTS films. The energy-dispersive X-ray average data at several points of the film surface assured the homogeneous distribution of the constituent elements in the CZTS film composition. The optical behavior and the optical band-gap values of the studied CZTS films before and after E.B. irradiation have been checked by using the Tauc relation. The optical band-gap values reduced from 1.98 to 1.86 eV when the irradiation doses rose from 0 to 60 kGy. The electrochemical performance of CZTS films, on the two different conductive substrates, was tested by the cyclic voltammetry and electrochemical impedance spectroscopy analysis.

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中文翻译：

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无需硫化一步沉积纳米晶Cu2ZnSnS4薄膜：未来前景

采用一步沉积喷雾热解技术制备了Cu ₂ ZnSnS ₄ (CZTS) 薄膜，无需进行后硫化处理。 X 射线衍射 (XRD) 已用于鉴定 EB 照射前后所研究薄膜的晶体结构。 (112)作为优选取向的存在表明了CZTS薄膜的锌黄锡矿相结构。薄膜表面多个点的能量色散 X 射线平均数据确保了 CZTS 薄膜组合物中组成元素的均匀分布。使用 Tauc 关系检查了 EB 照射前后所研究的 CZTS 薄膜的光学行为和光学带隙值。当辐照剂量从 0 kGy 增加到 60 kGy 时，光学带隙值从 1.98 eV 减小到 1.86 eV。通过循环伏安法和电化学阻抗谱分析测试了两种不同导电基材上CZTS薄膜的电化学性能。

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