A 0.75V 10nm FinField-Effect Transistor Based Hybrid Self Controlled PreCharge Free Content Addressable Memory for Low Standby Power Applications,International Journal of Electronics

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A 0.75V 10nm FinField-Effect Transistor Based Hybrid Self Controlled PreCharge Free Content Addressable Memory for Low Standby Power Applications
International Journal of Electronics ( IF 1.3 ) Pub Date : 2024-02-14 , DOI: 10.1080/00207217.2024.2312558
Arulpriya Shanmugam ₁ , Kumar Ponnusamy ₁

Affiliation

The switching speed and driving capability have been enhanced by scaling the transistor size to nanoscale. The limitations in using MOSFET are that the short channel effects such as leakage current...

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