We attempted to form silicon oxide films by spraying hexamethyldisiloxane (HMDSO) to a substrate together with low-energy O ion beam injections. The energy of O ions was 100 eV. The substrate temperature was set at room temperature. After the trial, we found a film deposited on the substrate. X-ray photoelectron spectroscopy (XPS) measurements of the film showed that the film was silicon dioxide. The XPS spectra of the film also showed that the film contained almost no carbon atoms. For comparison, 100 eV SiO ion beams were injected into a substrate at room temperature in conjunction with HMDSO. XPS results of the deposited film showed that the film was silicon oxide and the atomic concentration ratio of oxygen to silicon was 1.35. In this case, however, a relatively large amount of carbon atoms (12 atomic%) was included in the film. In conclusion, we confirmed that the 100 eV O ion beam induced deposition using HMDSO is useful for the silicon dioxide film formation.

中文翻译：

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使用六甲基二硅氧烷低能 O+ 或 SiO+ 离子束诱导氧化硅沉积

我们尝试通过将六甲基二硅氧烷 (HMDSO) 喷涂到基材上并同时注入低能 O 离子束来形成氧化硅薄膜。O离子的能量为100eV。基板温度设定为室温。试用后，我们发现基材上沉积了一层薄膜。该膜的X射线光电子能谱(XPS)测量表明该膜是二氧化硅。该薄膜的XPS光谱还表明该薄膜几乎不含碳原子。为了进行比较，在室温下将 100 eV SiO2 离子束与 HMDSO 一起注入基板中。沉积膜的XPS结果表明，该膜为氧化硅，氧与硅的原子浓度比为1.35。然而，在这种情况下，膜中包含相对大量的碳原子(12原子％)。总之，我们证实使用 HMDSO 的 100 eV O 离子束诱导沉积对于二氧化硅薄膜的形成是有用的。