Investigating the mechanism behind the high-efficiency deposition of high-quality diamond has always been a prominent topic in related research. This paper investigates the CH-H plasma characteristics and related chemical reaction kinetics in the average power density range of 18–100 W·cm, which is a typical range for large-area diamond film deposition. The number densities of H, CH and CH increase linearly with the average power density. CH is the main hydrocarbon in the discharge, and CH is the main single-carbon hydrocarbon. The number density and radial uniformity of CH and CH increase with the average power density, which is necessary for the high rate and uniform deposition of diamond films. The plasma's optical emission spectra indicate an acceleration in the C production rate at high power density. The diamond film deposition experiment demonstrates the efficacy of high average power density in achieving high-quality diamond deposition at a high growth rate.

中文翻译：

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探索MPCVD反应器高平均功率密度下高品质金刚石的生长机理

研究优质金刚石高效沉积的机理一直是相关研究的突出课题。本文研究了18-100 W·cm平均功率密度范围内的CH-H等离子体特性和相关化学反应动力学，这是大面积金刚石薄膜沉积的典型范围。H、CH 和 CH 的数密度随平均功率密度线性增加。CH是排放物中主要的碳氢化合物，CH是主要的单碳烃。CH和CH的数量密度和径向均匀性随着平均功率密度的增加而增加，这对于金刚石薄膜的高速率和均匀沉积是必要的。等离子体的光发射光谱表明高功率密度下碳生成速率加速。金刚石薄膜沉积实验证明了高平均功率密度在以高生长速率实现高质量金刚石沉积方面的功效。