We modeled the effect of thin AlAs in a single quantum well separate confinement heterostructure laser diode (SQW SCH LD) to reduce the current threshold and enhance the optical output power in the infrared region. The threshold current density at which lasing starts is lowered in the suggested device from 1132 A/cm to 888 A/cm. The optical power is increased to 40 mW at a very low threshold current density. The stimulated emission rate and electron leakage are markedly improved.

中文翻译：

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采用薄 p-AlAs 改进近红外激光二极管

我们模拟了单量子阱分离约束异质结构激光二极管 (SQW SCH LD) 中薄 AlAs 的效应，以降低电流阈值并增强红外区域的光输出功率。在建议的装置中，激光发射开始的阈值电流密度从 1132 A/cm 降低到 888 A/cm。在非常低的阈值电流密度下，光功率增加至 40 mW。受激发射率和电子泄漏得到显着改善。