Resistive random access memory (RRAM) with edge-contacted graphene electrode has much lower power consumption and excellent scalability as in other's previous studies, which shows great potential for in-memory computing, neuromorphic integrated circuits, Big Data analytics, etc. A physics-based SPICE compact model of RRAM with graphene electrode is proposed to capture the electro-thermal characteristics of the device with consideration of various physical effects in resistive switching processes, such as the temperature-dependent conductive filament (CF) evolution, tunneling between CF tip and electrode, graphene electrode oxidation, and self-heating effect. The equivalent thermal circuit (ETC) model is developed to capture the temperature response in RRAM. The influence of graphene electrode oxidation on the resistance of the device is taken into consideration. The compact model is verified by comparing the simulated characteristics of the set/reset process and forming process with other's published experimental data.

中文翻译：

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石墨烯电极电阻式随机存取存储器电热仿真的紧凑模型

与之前的研究相比，具有边缘接触石墨烯电极的电阻式随机存取存储器（RRAM）具有低得多的功耗和出色的可扩展性，这在内存计算、神经形态集成电路、大数据分析等方面显示出巨大的潜力。提出了基于带有石墨烯电极的 RRAM SPICE 紧凑模型，以捕获器件的电热特性，并考虑电阻开关过程中的各种物理效应，例如温度依赖性导电丝 (CF) 演化、CF 尖端和之间的隧道效应。电极、石墨烯电极氧化、自热效应。开发等效热电路 (ETC) 模型来捕获 RRAM 中的温度响应。考虑了石墨烯电极氧化对器件电阻的影响。通过将设定/复位过程和成形过程的模拟特性与其他人发表的实验数据进行比较，验证了紧凑模型。