Chalcopyrite-based solar cells have reached an efficiency of 23.35%, yet further improvements have been challenging. Here we present a 23.64% certified efficiency for a (Ag,Cu)(In,Ga)Se₂ solar cell, achieved through the implementation of a series of strategies. We introduce a relatively high amount of silver ([Ag]/([Ag] + [Cu]) = 0.19) into the absorber and implement a ‘hockey stick’-like gallium profile with a high concentration of Ga close to the molybdenum back contact and a lower, constant concentration in the region closer to the CdS buffer layer. This kind of elemental profile minimizes lateral and in-depth bandgap fluctuations, reducing losses in open-circuit voltage. In addition, the resulting bandgap energy is close to the local optimum of 1.15 eV. We apply a RbF post-deposition treatment that leads to the formation of a Rb–In–Se phase, probably RbInSe₂, passivating the absorber surface. Finally, we discuss future research directions to reach 25% efficiency.

基于黄铜矿的太阳能电池的效率已达到 23.35%，但进一步的改进仍然具有挑战性。在这里，我们展示了通过实施一系列策略实现的(Ag,Cu)(In,Ga)Se _{2太阳能电池的 23.64% 认证效率。}我们在吸收器中引入相对大量的银 ([Ag]/([Ag] + [Cu]) = 0.19)，并在靠近钼背面的地方实现了“曲棍球棒”状的镓分布，其中高浓度的 Ga接触，并且靠近 CdS 缓冲层的区域具有较低、恒定的浓度。这种元素分布最大限度地减少了横向和深度带隙波动，从而减少了开路电压的损耗。此外，所得带隙能量接近局部最优值 1.15 eV。我们采用 RbF 后沉积处理，形成 Rb-In-Se 相（可能是 RbInSe _{2 ）}，从而钝化吸收器表面。最后，我们讨论了达到 25% 效率的未来研究方向。