In solidly mounted resonator (SMR) type of bulk acoustic wave resonator, it is difficult to fabricate single crystalline piezoelectric thin films in a bottom-up process due to the amorphous SiO₂ in the low acoustic impedance layer of the acoustic Bragg reflector. In this study, single crystalline ZnO piezoelectric layer on amorphous SiO₂/polycrystalline Mo acoustic Bragg reflector is fabricated using a wet etching process of the epitaxial Au sacrificial layer. Epitaxial growth of ZnO was confirmed by X-ray diffraction pole figure and transmission electron microscope electron diffraction pattern. Resonance frequency of 1.3 GHz of epitaxial ZnO SMR was observed using a network analyzer.

中文翻译：

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使用外延 Au 牺牲层制造的 SiO2/Mo 固装谐振器上的外延 ZnO 压电层

在固装谐振器(SMR)型体声波谐振器中，由于声布拉格反射器的低声阻抗层中存在非晶SiO ₂，​​因此难以以自下而上的工艺制造单晶压电薄膜。在本研究中，采用外延Au牺牲层的湿法蚀刻工艺在非晶SiO ₂ /多晶Mo声布拉格反射器上制造单晶ZnO压电层。通过X射线衍射极图和透射电子显微镜电子衍射图证实了ZnO的外延生长。使用网络分析仪观察到外延 ZnO SMR 的谐振频率为 1.3 GHz。