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Editor’s note: “Impurity incorporation in epitaxially laterally overgrown GaN detected by cryogenic photoluminescence microscope with sub-micron spatial resolution” (Journal of Crystal Growth, Volumes 237–239, Part 2, April 2002, Pages 1075-1078) [https://doi.org/10.1016/S0022-0248(01)02139-X]
Journal of Crystal Growth ( IF 1.8 ) Pub Date : 2024-02-06 , DOI: 10.1016/j.jcrysgro.2024.127599 Jeffrey Derby
中文翻译:
编者按:“通过具有亚微米空间分辨率的低温光致发光显微镜检测到外延横向过度生长的 GaN 中的杂质掺入”(《晶体生长杂志》,第 237-239 卷,第 2 部分,2002 年 4 月,第 1075-1078 页)[https:// doi.org/10.1016/S0022-0248(01)02139-X]
更新日期:2024-02-06
Journal of Crystal Growth ( IF 1.8 ) Pub Date : 2024-02-06 , DOI: 10.1016/j.jcrysgro.2024.127599 Jeffrey Derby
中文翻译:
编者按:“通过具有亚微米空间分辨率的低温光致发光显微镜检测到外延横向过度生长的 GaN 中的杂质掺入”(《晶体生长杂志》,第 237-239 卷,第 2 部分,2002 年 4 月,第 1075-1078 页)[https:// doi.org/10.1016/S0022-0248(01)02139-X]