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A novel approach to reduce the oxygen content in monocrystalline silicon by Czochralski method
Journal of Crystal Growth ( IF 1.8 ) Pub Date : 2024-02-06 , DOI: 10.1016/j.jcrysgro.2024.127608
Jiancheng Li , Junlei Wang , Lijun Liu , Yong Wen , Changzhen Wang

High-efficiency solar cells require monocrystalline silicon wafers with lower oxygen content. This paper presents a design for an oxygen-lowering ring to decrease the oxygen content of 300 mm monocrystalline silicon, and experimentally verifies its effectiveness in reducing oxygen. Numerical simulations show that the use of the oxygen-lowering ring leads to a decrease of the crucible temperature at the bottom of the crucible and an increase of the crucible temperature at the top side of the crucible. In addition, a series of global simulations of oxygen transport were conducted to analyze how variations in the temperature distribution of the crucible wall affect the oxygen content at the m-c interface. The simulations revealed that the region of the crucible wall where dissolved oxygen is transported to the m-c interface is contained within the region of the crucible wall where the temperature decreases, implying that the addition of the oxygen-lowering ring reduces the source of oxygen transported to the m-c interface. Moreover, the addition of the oxygen-lowering ring reduces the turbulent viscosity in the melt, which weakens the ability to transport oxygen to the m-c interface.

中文翻译:

提拉法降低单晶硅氧含量的新方法

高效太阳能电池需要氧含量较低的单晶硅片。本文提出了一种降低300mm单晶硅氧含量的降氧环的设计,并通过实验验证了其降低氧的有效性。数值模拟表明,降氧环的使用导致坩埚底部的坩埚温度降低,而坩埚顶部的坩埚温度升高。此外,还进行了一系列氧传输的全局模拟,以分析坩埚壁温度分布的变化如何影响MC界面处的氧含量。模拟结果表明,溶解氧传输至 mc 界面的坩埚壁区域包含在温度降低的坩埚壁区域内,这意味着降氧环的添加减少了传输至 mc 界面的氧来源。 MC接口。而且,降氧环的加入降低了熔体中的湍流粘度,削弱了氧向mc界面输送的能力。
更新日期:2024-02-06
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