Indium selenide (InSe), group III-VI semiconductor, has various crystal phases, so that the growth technique for controlling the crystal phase is necessary for studying the novel properties as well as the device applications. In this work, we demonstrate the phase-controlled growth of InSe using metalorganic chemical vapor deposition. As the growth temperature increases, the crystal phase changes from InSe, β-InSe to γ-InSe, which can be explained by their thermal stability. Besides, as the gas-phase VI/III source molar ratio increases, the crystal phase changes from InSe to InSe, indicating that Se-rich surface stoichiometry results in Se-rich crystal phase, InSe. We summarized the crystal phases depending on the growth temperature and the VI/III source molar ratio as a phase diagram. The InSe growth near the phase boundary between InSe and β-InSe take place under surface-reaction-limited regime and the dissociation of Se source mainly controls the surface stoichiometry. This phase diagram will be a guideline for the phase-pure InSe synthesis and pave the way for the optoelectronic applications.

中文翻译：

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金属有机化学气相沉积相控生长硒化铟

硒化铟(InSe)是III-VI族半导体，具有多种晶相，因此控制晶相的生长技术对于研究其新颖性能和器件应用是必要的。在这项工作中，我们展示了使用金属有机化学气相沉积进行 InSe 的相控生长。随着生长温度的升高，晶相从InSe、β-InSe转变为γ-InSe，这可以通过它们的热稳定性来解释。此外，随着气相VI/III源摩尔比的增加，晶相从InSe转变为InSe，表明富Se表面化学计量导致富Se晶相InSe。我们将取决于生长温度和 VI/III 源摩尔比的晶相总结为相图。InSe和β-InSe相界附近的InSe生长发生在表面反应限制的条件下，并且Se源的解离主要控制表面化学计量。该相图将为纯相 InSe 合成提供指导，并为光电应用铺平道路。