The dynamic radiation effects on the electrical properties of chemical-vapor-deposited silicon carbides (CVD-SiCs) were investigated in situ under gamma-ray irradiation at various ionizing dose rates of 0.52–5.9 Gy/s at room temperature in air. The initial rapid increase in the electrical conductivity occurred because of electronic excitation at a rate proportional to the ionizing dose rates. The base conductivity without radiation also increased rapidly at doses below approximately 10 kGy and thereafter increased gradually. Scanning electron microscopy and transmission electron microscopy images and X-ray photoelectron spectroscopy spectra revealed the melting formation and presence of carbon-rich formations on the gamma-ray-irradiated surface.

中文翻译：

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碳化硅的辐射感应电导率和电退化对电离剂量率的依赖性

在室温空气中，在 0.52-5.9 Gy/s 的各种电离剂量率的伽马射线照射下，现场研究了动态辐射对化学气相沉积碳化硅 (CVD-SiC) 电性能的影响。由于电子激发的速率与电离剂量率成正比，电导率最初迅速增加。在剂量低于约 10 kGy 时，无辐射时的基础电导率也迅速增加，此后逐渐增加。扫描电子显微镜和透射电子显微镜图像以及X射线光电子能谱揭示了伽马射线照射表面上的熔化形成和富碳形成物的存在。