This work investigated tungsten samples that were pre-damaged at room (300 K) and high temperatures (573 and 873 K) using 3.5 MeV iron ions and then exposed to the high-flux deuterium plasma. The vacancy-type defects and the behavior of deuterium retention in the investigated tungsten were characterized and compared to study the effect of high-temperature pre-damage. Results of slow positron annihilation with Doppler broadening spectroscopy indicate the introduction of numerous defects by the room-temperature damage and the formation of larger-sized vacancy clusters by the high-temperature pre-damage. Surface observation demonstrates that the pre-damage at room temperature effectively suppressed the formation of intra-granular blisters, while the pre-damage at high temperature did not exhibit such a significant suppression effect on blister formation. Thermal desorption results show that pre-damage at room temperature significantly increases deuterium desorption. Pre-damage at high temperatures also strengthens deuterium desorption, not as significantly as room-temperature pre-damage, and meanwhile produces additional desorption at around 900 K. These results indicate differences between room-temperature and high-temperature pre-damage in the generation of defects and their impact on deuterium retention. Compared to room-temperature pre-damage, high-temperature pre-damage tends to generate defects with a larger average size, weakening the suppression effect on deuterium aggregation and blistering within the grains of tungsten, reducing the quantity of deuterium trapping sites and producing higher-energy deuterium traps.

中文翻译：

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高温预损伤对钨中空位型缺陷和氘保留的影响

这项工作研究了使用 3.5 MeV 铁离子在室温（300 K）和高温（573 和 873 K）下预损坏的钨样品，然后暴露于高通量氘等离子体。对所研究的钨中的空位型缺陷和氘保留行为进行了表征和比较，以研究高温预损伤的影响。多普勒展宽光谱的慢速正电子湮灭结果表明，室温损伤引入了许多缺陷，高温预损伤形成了较大尺寸的空位簇。表面观察表明，室温预损伤有效抑制了晶内气泡的形成，而高温预损伤对气泡形成没有表现出如此显着的抑制效果。热解吸结果表明，室温下的预损伤显着增加了氘的解吸。高温预损伤也增强了氘的解吸，但不如室温预损伤那么显着，同时在 900 K 左右产生额外的解吸。这些结果表明室温和高温预损伤在生成过程中存在差异。缺陷及其对氘保留的影响。与室温预损伤相比，高温预损伤容易产生平均尺寸较大的缺陷，削弱了对钨晶粒内氘聚集和起泡的抑制作用，减少了氘捕获位点的数量，产生了更高的产率。 -能量氘陷阱。