In this work, models of p-type CuO metal-oxide- semiconductor (MOS) capacitor and thin-film transistors (TFTs) are established using numerical simulation tools and compared with experimental data, to investigate the impact of a passivation layer on the TFT subthreshold behavior. Simulated transfer curves and hole concentrations of back-gated CuO TFT with 10 μm channel length confirm the experimental observation of buried-channel and accumulation-mode conduction mechanisms. The subthreshold behavior is analyzed with HfO2 passivation on the top CuO surface varying the densities of fixed oxide charge and interface states, as well as the thickness of the CuO film. The simulation results demonstrate a significant potential improvement of the subthreshold slope and on/off current ratio, mainly thanks to the optimization of the fixed oxide charge densities.

中文翻译：

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钝化层对p型CuO积累型薄膜晶体管亚阈值行为的影响

在这项工作中，利用数值模拟工具建立了 p 型 CuO 金属氧化物半导体 (MOS) 电容器和薄膜晶体管 (TFT) 的模型，并与实验数据进行比较，以研究钝化层对 TFT 的影响亚阈值行为。沟道长度为 10 μm 的背栅 CuO TFT 的模拟传输曲线和空穴浓度证实了埋沟道和累积模式传导机制的实验观察。通过改变固定氧化物电荷和界面态的密度以及 CuO 薄膜的厚度，对 CuO 顶部表面上的 HfO2 钝化进行了亚阈值行为分析。仿真结果表明，亚阈值斜率和开/关电流比具有显着的潜在改善，这主要归功于固定氧化物电荷密度的优化。