A high-speed and high-power modified uni-traveling-carrier photodiode (MUTC-PD) is optimized and fabricated. The optimization method takes carrier transport as the core and considers the hole transport time limited bandwidth of the MUTC-PD for the first time. Taking into account the impact of the electron transport time and RC time constant on device performance, the device is simulated and fabricated. In structure epitaxy, it is proposed to use graded doping to fit Gaussian doping to reduce the epitaxial growth error. The measured bandwidth of the MUTC-PD reaches 34 GHz and the RF output power reaches 17.1 dBm with the mesa diameter of $20~\mu \text{m}$ . In addition, the influence of modulation depth on high-speed and high-power performance is studied.

中文翻译：

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高功率 MUTC-PD 的带宽优化和制造

优化并制造了高速高功率改进型单行载流子光电二极管（MUTC-PD）。该优化方法以载流子传输为核心，首次考虑了MUTC-PD的空穴传输时间受限带宽。考虑电子传输时间和RC时间常数对器件性能的影响，对器件进行了仿真和制作。在结构外延中，提出采用分级掺杂来拟合高斯掺杂，以减少外延生长误差。MUTC-PD的实测带宽达到34GHz，射频输出功率达到17.1dBm，台面直径为 $20~\mu \text{m}$ 。此外，还研究了调制深度对高速大功率性能的影响。