In this work, the influence of two-dimensional state density on oscillations of transverse electrical conductivity in heterostructures with rectangular quantum wells is investigated. A new analytical expression is derived for calculating the temperature dependence of the transverse electrical conductivity oscillation and the magnetoresistance of a quantum well. For the first time, a mechanism is developed for oscillating the transverse electrical conductivity and magnetoresistance of a quantum well from the first-order derivative of the magnetic field (differential) \(\frac{{\partial \left( {\rho_{ \bot }^{2d} (E,B,T,d)} \right)}}{\partial B}\) at low temperatures and weak magnetic fields. The oscillations of electrical conductivity and magnetoresistance of a narrow-band quantum well with a non-parabolic dispersion law are investigated. The proposed theory investigates the results of experiments of a narrow-band quantum well (In_xGa_1−xSb). The experiment shows that the oscillations of the transverse magnetoresistance of the In_xGa_1−xSb quantum filament, measured at a temperature of 2 K, transform into a continuous energy spectrum due to thermal washing under the influence of the temperature growth dynamics.

在这项工作中，研究了二维态密度对矩形量子阱异质结构中横向电导率振荡的影响。推导了一种新的解析表达式，用于计算量子阱的横向电导率振荡和磁阻的温度依赖性。首次开发了一种从磁场的一阶导数（微分）振荡量子阱的横向电导率和磁阻的机制\(\frac{{\partial \left( {\rho_{ \ bot }^{2d} (E,B,T,d)} \right)}}{\partial B}\)在低温和弱磁场下。研究了具有非抛物线色散定律的窄带量子阱的电导率和磁阻振荡。所提出的理论研究了窄带量子阱（In _x Ga _{1− x} Sb）的实验结果。实验表明，在2 K温度下测量的In _x Ga _{1− x} Sb量子丝的横向磁阻振荡，在温度增长动力学的影响下，由于热清洗而转变为连续能谱。