CMOS VLSI technology is the most dominant integration methodology prevailing in the world today. Various signal-processing blocks are made using analog or digital design techniques in MOS VLSI. An important component is the Memory unit used to store data. In the project a memory cell has been built up using analog design method. A capacitor is used as the basic storage device. The main idea behind analog memory is that the analog value of the charge or voltage stored in the capacitor is the data stored. So the dielectric quality of the capacitor becomes important here to determine how effectively it can store some charge. Analog memory is a trade off between hardware cost, chip area and accuracy or quality of storage. The circuit of analog memory cell was developed starting from the idea that required voltage will be stored in a capacitor and MOS transistors were used as switches. A given technology of integration was used and hence the dielectric property of the capacitor was fixed. By suitable circuit configuration the analog voltage value was written to the capacitor, read out when required and the charge loss was also refreshed. The results obtained are as given in the thesis.

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0.25微米CMOS工艺模拟存储单元的设计

CMOS VLSI 技术是当今世界最主要的集成方法。各种信号处理模块是使用 MOS VLSI 中的模拟或数字设计技术制成的。一个重要的组件是用于存储数据的内存单元。在该项目中，使用模拟设计方法构建了存储单元。使用电容器作为基本存储器件。模拟存储器背后的主要思想是，存储在电容器中的电荷或电压的模拟值就是存储的数据。因此，电容器的介电质量在这里变得很重要，它决定了它存储电荷的效率。模拟存储器是硬件成本、芯片面积和存储精度或质量之间的权衡。模拟存储单元电路的开发思路是，将所需电压存储在电容器中，并使用 MOS 晶体管作为开关。使用给定的集成技术，因此电容器的介电性能是固定的。通过适当的电路配置，模拟电压值被写入电容器，在需要时读出，并且电荷损失也被刷新。所得结果如论文中给出。