In this letter, a Ti/Sn-Ga2O3/Ni Schottky photodiode device was achieved by a rarely-reported PECVD technology. Benefitting from the introduction of Sn impurity energy level, which provides extra paths for carriers’ generation and helps create a stronger built-in electric field to facilitate carriers’ separation, the carrier transport and injection efficiency of device are collaboratively enhanced. Under 254 nm deep-ultraviolet (DUV) light, the device displays an ultrahigh responsivity ( ${R}{)}$ of 3508A/W, outperforming the corresponding Ti/Ga2O3/Ni device (14.7 A/W) and many other Sn-doped Ga2O3 photodetectors (PDs). Meanwhile, the device exhibits the low dark current of −6.6pA/4.79nA (~720 rectification ratio) under dark conditions, together with a remarkable external quantum efficiency of ${1}.{72}\times {10} ^{{6}}$ %, an outstanding detectivity of ${4}.{9} \times {10} ^{{14}}$ Jones at 5 V bias under DUV illumination. Furthermore, the device can operate in self-powered mode with an ${R}$ of 100 mA/W as well, and this work demonstrates the huge potential of high-performance PECVD-grown elemental-doped Ga2O3 film-based PDs.

中文翻译：

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通过引入杂质能级增强 Ga2O3 深紫外肖特基光电二极管的载流子传输和注入

在这封信中，Ti/Sn-Ga2O3/Ni 肖特基光电二极管器件是通过很少报道的 PECVD 技术实现的。得益于Sn杂质能级的引入，为载流子的产生提供了额外的路径，并有助于产生更强的内建电场以利于载流子分离，协同提高了器件的载流子传输和注入效率。在 254 nm 深紫外 (DUV) 光下，该器件表现出超高响应率 ( ${R}{)}$3508A/W，优于相应的 Ti/Ga2O3/Ni 器件 (14.7 A/W) 和许多其他 Sn 掺杂 Ga2O3 光电探测器 (PD)。同时，该器件在暗条件下表现出-6.6pA/4.79nA（约720整流比）的低暗电流，以及显着的外量子效率 ${1}.{72}\乘以{10} ^{{6}}$ %，出色的探测能力 ${4}.{9} \乘以{10} ^{{14}}$Jones 在 DUV 照明下处于 5 V 偏压。此外，该设备可以在自供电模式下运行 ${R}$电流也达到 100 mA/W，这项工作展示了高性能 PECVD 生长的元素掺杂 Ga2O3 薄膜 PD 的巨大潜力。