This work proposes an emission (EM) gate driver that is based on p-type low-temperature poly-crystalline silicon thin-film transistors (LTPS TFTs) with the implementation of lightly doped drain (LDD) to achieve flat off current. The long-tail phenomenon associated with the EM signal that is caused by a high threshold voltage (VTH) and (VTH variation in LTPS TFTs is improved by enhancing the driving capability of the pull-down TFT. The pulse width of the EM signal is adjustable, and the gate driver has a stabilizing structure to reduce the voltage deviation caused by the high leakage current ( $\text{I}_{\text {Leak}}{)}$ of LTPS TFTs; it keeps the EM signal at its lowest voltage level for 96.7% of the duration of a frame. Measurements indicate that the proposed structure shortens the falling time of the EM signal to $3.815 ~\mu \text{s}$ , which is much shorter than a horizontal time of $46 ~\mu \text{s}$ , yielding an EM signal with low distortion. An accelerated lifetime test demonstrates the high reliability of the proposed gate driver, which has the potential for driving active-matrix organic light-emitting diodes (AMOLEDs) smartwatch displays.

中文翻译：

---

通过减少智能手表显示器的下降时间和增加稳定周期，解决基于 P 型 LTPS TFT 的发射栅极驱动器的 VTH 和 ILeak 问题

这项工作提出了一种基于 p 型低温多晶硅薄膜晶体管 (LTPS TFT) 的发射 (EM) 栅极驱动器，并采用轻掺杂漏极 (LDD) 来实现平坦关断电流。通过增强下拉TFT的驱动能力，改善了LTPS TFT中由高阈值电压(VTH)和(VTH变化)引起的与EM信号相关的长尾现象。EM信号的脉冲宽度为可调，栅极驱动器具有稳定结构，减少高漏电流引起的电压偏差（ $\text{I}_{\text {泄漏}}{)}$LTPS TFT；它在一帧持续时间的 96.7% 内将 EM 信号保持在最低电压水平。测量表明，所提出的结构将电磁信号的下降时间缩短至 $3.815 ~\mu \text{s}$ ，这比水平时间短得多 $46 ~\mu \text{s}$ ，产生低失真的电磁信号。加速寿命测试证明了所提出的栅极驱动器的高可靠性，该驱动器具有驱动有源矩阵有机发光二极管（AMOLED）智能手表显示器的潜力。