Among the various methods that have been utilized to enhance the efficiency of Bulk Acoustic Wave (BAW) filters, the AlN piezoelectric layer quality improvement demonstrates robust functionality and operability. A combination of pulsed laser deposition (PLD) and metal–organic chemical vapor deposition (MOCVD) methods of growing III-nitride films, the MEMS wafer process based on which was then constructed to prepare the Single-crystalline AlN Bulk Acoustic Resonators (SABAR). The as-grown film has a reduced full-width at half-maximums for AlN (0002) X-ray rocking curves of 0.21°, a lower average RMS of 0.140nm, and a higher effective coupling coefficient of 6.25%, indicating a 4097 Q-factor of SABAR resonator that precedes BAWs by an incredibly 182.5% with PVD sputtered AlN.

中文翻译：

---

PLD 与 MOCVD 相结合生长 AlN 薄膜的单晶体声波谐振器

在用于提高体声波 (BAW) 滤波器效率的各种方法中，AlN 压电层质量的改进展示了强大的功能和可操作性。结合脉冲激光沉积 (PLD) 和金属有机化学气相沉积 (MOCVD) 方法生长 III 族氮化物薄膜，然后构建基于该方法的 MEMS 晶圆工艺来制备单晶 AlN 体声谐振器 (SABAR) 。生长后的薄膜的 AlN (0002) X 射线摇摆曲线的半峰全宽减小了 0.21°，平均 RMS 较低，为 0.140nm，有效耦合系数较高，为 6.25%，表明 4097使用 PVD ​​溅射 AlN 时，SABAR 谐振器的 Q 值比 BAW 高出令人难以置信的 182.5%。