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Suppression of Gate-Induced-Drain-Leakage Utilizing Local Polarization in Ferroelectric-Gate Field-Effect Transistors for DRAM Applications
IEEE Electron Device Letters ( IF 4.9 ) Pub Date : 2024-02-27 , DOI: 10.1109/led.2024.3370592 Been Kwak 1 , Kitae Lee 2 , Sihyun Kim 3 , Daewoong Kwon 1
中文翻译:
利用 DRAM 应用的铁电栅极场效应晶体管中的局部极化来抑制栅极感应漏极泄漏
更新日期:2024-02-27
IEEE Electron Device Letters ( IF 4.9 ) Pub Date : 2024-02-27 , DOI: 10.1109/led.2024.3370592 Been Kwak 1 , Kitae Lee 2 , Sihyun Kim 3 , Daewoong Kwon 1
Affiliation
中文翻译:
利用 DRAM 应用的铁电栅极场效应晶体管中的局部极化来抑制栅极感应漏极泄漏