This study systematically investigated the Cr-doped ZnGaO electroluminescent (EL) device, demonstrating the emission of near-infrared (NIR) light. The ZnGaO:Cr film was prepared by a facile and cost-effective method within all-air atmosphere processes. It consists of a naturally grown amorphous SiO and an optically active ZnGaOCr layer. Under a sinusoidal voltage waveform, the device emits an NIR spectrum without the need for additional background gas or other implantation methods. The proposed mechanism suggests that light generation occurs through hot electrons released from the amorphous SiO layer, injected into the active layer, leading to impact-ionization. The optical characteristics of the EL device are presented, and its response to applied polarities is thoroughly investigated. Finally, given the cost-effectiveness of our EL device preparation, this proposed research is of considerable importance for advancing the development of EL devices in silicon photonics.

中文翻译：

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硅片上 ZnGa2O4:Cr3+ 近红外薄膜电致发光器件

本研究系统地研究了 Cr 掺杂 ZnGaO 电致发光 (EL) 器件，展示了近红外 (NIR) 光的发射。ZnGaO:Cr 薄膜是通过一种简便且经济高效的方法在全空气气氛工艺中制备的。它由自然生长的非晶 SiO 和光学活性 ZnGaOCr 层组成。在正弦电压波形下，该器件无需额外的背景气体或其他注入方法即可发射近红外光谱。所提出的机制表明，光的产生是通过从非晶 SiO 层释放的热电子注入到活性层中而发生的，从而导致碰撞电离。介绍了 EL 器件的光学特性，并彻底研究了其对所施加极性的响应。最后，考虑到我们的 EL 器件制备的成本效益，这项研究对于推进硅光子学中 EL 器件的发展具有相当重要的意义。