In this study, a biosensor utilizing a dielectric-modulated amorphous indium gallium zinc oxide (a-IGZO) thin film transistor (TFT) is introduced. TFT biosensors have garnered significant attention due to their heightened sensitivity, scalable nature, low power consumption, rapid electrical detection capabilities, and cost-effective means of mass production. By embedding a nano-cavity within the gate insulator of the TFT, biomolecules can accumulate within. As each biomolecule possesses its own dielectric constant, it modulates the effective gate capacitance and, subsequently, changes the channel conductance. To assess the sensitivity of the biosensor, variation in saturation current after the absorption of biomolecules with respect to the drain current in the case of an air-filled cavity has been considered as a precise measure. The efficient operation of a biosensor is contingent upon the sensitivity being highly dependent on the dielectric constant of the biomolecules that are accumulated within the nano-cavity. Consequently, a comprehensive evaluation has been conducted to ascertain the impact of critical design parameters which have the potential to affect the sensitivity of the biosensor. Additionally, a statistical analysis based on coefficient of variation measure has been performed to evaluate the susceptibility of the biosensor’s sensitivity to variations in geometrical and physical design parameters. The utilization of label-free detection methodology in this device presents a notable advantage due to its compatibility with the fundamental CMOS processing technology and its cost-effective potential for macro production.

中文翻译：

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基于非晶氧化铟镓锌（a-IGZO）薄膜晶体管的纳米生物传感器的设计与仿真

在这项研究中，介绍了一种利用介电调制非晶氧化铟镓锌（a-IGZO）薄膜晶体管（TFT）的生物传感器。TFT 生物传感器因其高灵敏度、可扩展性、低功耗、快速电气检测能力以及经济高效的大规模生产方式而受到广泛关注。通过在 TFT 的栅极绝缘体中嵌入纳米腔，生物分子可以在其中积聚。由于每个生物分子拥有自己的介电常数，因此它可以调节有效栅极电容，从而改变沟道电导。为了评估生物传感器的灵敏度，在充满空气的腔体的情况下，吸收生物分子后饱和电流相对于漏极电流的变化被认为是一种精确测量。生物传感器的有效运行取决于灵敏度，而灵敏度高度依赖于纳米腔内积累的生物分子的介电常数。因此，进行了全面评估，以确定可能影响生物传感器灵敏度的关键设计参数的影响。此外，还进行了基于变异系数测量的统计分析，以评估生物传感器对几何和物理设计参数变化的敏感性。由于其与基本 CMOS 处理技术的兼容性以及宏观生产的成本效益潜力，该设备中使用的无标记检测方法具有显着的优势。