With the development of the integrated circuit industry and semiconductor technology, we have entered the sub-10 nanometers era, which means the distance between adjacent components in a device is less than 10 nm. This is a situation where the parasitic capacitance of metal interconnects must be considered. Parasitic capacitance can act as a significant influence in different ways on disparate devices. Fin field-effect transistors and microelectromechanical systems are typical devices and deserve further detailed explanation on their parasitic capacitance. There are many ways to reduce parasitic capacitance and its attendant effects, including using materials with low dielectric constants and optimizing the structure of the layout. Some others are newly brought out in recent years due to advanced industrial technology and new materials, including carbon nanotubes, oxide-free spacer layers, and tunneling hybrid technology. All these methods are of great significance and practicability to producing and applying semiconductor devices and structures. Knowing more about this expertise about parasitic capacitance can help us better understand its nature and specialties.

中文翻译：

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亚10纳米时代金属互连的寄生电容考虑

随着集成电路产业和半导体技术的发展，我们已经进入亚10纳米时代，这意味着器件中相邻元件之间的距离小于10纳米。在这种情况下，必须考虑金属互连的寄生电容。寄生电容可以以不同的方式对不同的设备产生重大影响。鳍式场效应晶体管和微机电系统是典型器件，值得对其寄生电容进行进一步详细解释。有很多方法可以减少寄生电容及其附带影响，包括使用低介电常数材料和优化布局结构。其他一些是近年来由于先进的工业技术和新材料而新出现的，包括碳纳米管、无氧化物间隔层和隧道混合技术。这些方法对于半导体器件和结构的生产和应用具有重要的意义和实用性。了解更多有关寄生电容的专业知识可以帮助我们更好地了解其性质和特点。