Ti-doped MoO thin film was sputtered onto a n-Si substrate and the MoO:Ti/n-Si heterojunction photodetector fabricated. The elemental composition and the morphological analyses of the MoO film have been carried out by EDX and SEM studies, respectively. The band gap of sputtered MoO:Ti film was found to be 3.26eV from UV-Vis spectra. The optical performance of the constructed device under visible light between 10-150mW, under 365nm and 395nm UV light and 850nm NIR light was examined in detail with the help of current-voltage (I-V) characteristics. From the analysis of the experimental I-V characteristics of the MoO:Ti/n-Si heterojunction photodetector, the largest responsivity values were determined as 0.41A/W in visible light of 10mW/cm, 2.03A/W under UV light of 365nm and 0.67A/W for 850nm NIR light, respectively. Furthermore, the largest specific detectivity values were calculated as 3.21×10 Jones in visible light (10mW/cm), 1.61×10 Jones, under UV light of 365nm, and 3.21×10 Jones, respectively. Repeated measurements after 30 days showed that the device was quite stable both in the dark and in a broadband.

中文翻译：

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基于 Ti 掺杂非晶 MoO3 的高度稳定、自供电 UV-Vis-NIR 宽带同型光电探测器

将 Ti 掺杂 MoO 薄膜溅射到 n-Si 衬底上，并制作 MoO:Ti/n-Si 异质结光电探测器。MoO薄膜的元素组成和形貌分析分别通过EDX和SEM研究进行。从紫外-可见光谱中发现溅射MoO:Ti薄膜的带隙为3.26eV。借助电流-电压 (IV) 特性，详细检查了所构建器件在 10-150mW 可见光、365nm 和 395nm 紫外光以及 850nm 近红外光下的光学性能。通过对MoO:Ti/n-Si异质结光电探测器的实验IV特性分析，确定其最大响应度值在10mW/cm可见光下为0.41A/W，在365nm紫外光下为2.03A/W，在365nm紫外光下为0.67。 A/W 分别适用于 850nm NIR 光。此外，计算出最大比探测率值分别为可见光（10mW/cm）下的3.21×10 Jones、365nm紫外光下的1.61×10 Jones、以及3.21×10 Jones。30 天后的重复测量表明，该设备在黑暗中和宽带中都相当稳定。