Engineering of interfaces and point defects in ferroelectric memristors is an efficient way for manipulating the resistive switching effects of mixed ionic‐electronic nature. However, an interplay between the defects, interfacial properties, and ferroelectric polarization as well as their influence on the resistance state tuning are yet to be revealed. By considering the memristive device built on a thin polycrystalline BaTiO3 film, a drift‐diffusion model of non‐stationary processes is developed. The model is based on Poisson and continuity equations solved numerically and accounts for various transport mechanisms for electrons, holes, and oxygen vacancies. Comparing simulated resistive effects with experimental data taken in a wide temperature range, it is shown that an appearance of the analog resistive switching cannot be explained solely by oxygen‐ionic transport. Investigated switching dynamics claims the oxygen vacancies redistribution to be responsible for the analog character of the switching at the prevalence of the electron hopping transport. Crucially, the required dynamics of the vacancies redistribution is achieved only in a narrow range of their mobility. These results can be used in designing the ferroelectric memristors for nonvolatile multilevel memory devices satisfying the requirements that arise at the stages of their integration into neuromorphic architectures.

中文翻译：

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薄多晶钛酸钡中模拟开关行为的动力学

铁电忆阻器中的界面和点缺陷工程是操纵混合离子电子性质的电阻开关效应的有效方法。然而，缺陷、界面性质和铁电极化之间的相互作用以及它们对电阻状态调节的影响尚未揭示。考虑建立在薄多晶 BaTiO 上的忆阻器件3薄膜，开发了非平稳过程的漂移扩散模型。该模型基于泊松和连续性方程的数值求解，并考虑了电子、空穴和氧空位的各种传输机制。将模拟电阻效应与宽温度范围内的实验数据进行比较，结果表明模拟电阻开关的出现不能仅用氧离子传输来解释。研究的开关动力学声称氧空位重新分布是电子跳跃传输盛行时开关模拟特征的原因。至关重要的是，职位空缺重新分配所需的动力只能在其流动性的狭窄范围内实现。这些结果可用于设计非易失性多级存储器件的铁电忆阻器，以满足其集成到神经形态架构阶段出现的要求。