Tungsten targets produced by the additive manufacturing (AM) method of electron-beam powder-bed fusion, or 3-D metal printing, are exposed to high flux D plasma in the linear plasma device with the plasma-exposed surface normal to the AM build direction. D retention was measured by thermal desorption mass spectrometry following exposure to D plasma with an associated D ion flux. D fluence, and operational temperature, in the ranges – m and 400–1000 K, are explored. D retention values for the AM W are compared to identically plasma exposed ’conventional’ sintered W and it is found that total D retention is similar. However, the D thermal release is notably different. Desorption from the AM W shows reduced D retention in traps typical of sintered W, and moderately increased trapping in defect types of higher trap release energy. The dependence of D retention on fluence is also different for the AM W, revealing an uptake slower than expected from Fickian diffusion, while that for sintered W is consistent and in agreement with previous poly-crystalline W results from . Hydrogen transport modeling of the fluence dependence suggests that interconnected pathways for D release back to the surface during plasma-exposure can account for the slower D uptake in the AM W.

中文翻译：

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双鱼座射频中暴露于高通量氘等离子体的电子束粉末床熔融（3D 打印）钨中的 D 保留

通过电子束粉末床熔合增材制造 (AM) 方法或 3D 金属打印生产的钨靶材，在线性等离子体装置中暴露于高通量 D 等离子体，等离子体暴露表面垂直于 AM 结构方向。暴露于具有相关 D 离子通量的 D 等离子体后，通过热解吸质谱法测量 D 保留。探索了 D 注量和工作温度（m 和 400-1000 K 范围内）。将 AM W 的 D 保留值与相同等离子体暴露的“传统”烧结 W 进行比较，发现总 D 保留相似。然而，D 热释放明显不同。AM W 的解吸显示出烧结 W 典型陷阱中 D 保留的减少，以及较高陷阱释放能量的缺陷类型中的陷阱的适度增加。AM W 的 D 保留对注量的依赖性也不同，表明吸收速度比 Fickian 扩散的预期慢，而烧结 W 的吸收速度与之前的多晶 W 结果一致并一致。注量依赖性的氢传输模型表明，在等离子体暴露期间 D 释放回表面的互连途径可以解释 AM W 中 D 吸收较慢的原因。