Hydrogen plays a crucial role in controlling the electrical characteristics of oxide thin‐film transistors (TFTs). The conductivity of the semiconductor can be modulated by controlling the amount of hydrogen in the active layer. In this study, a thermal annealing of the sample in an inverted orientation (referred to as “upside‐down annealing”) is introduced. The impact of this approach on the hydrogen content within the In2O3 active layer is examined through the lens of a hydrogen diffusion model. By time‐of‐flight secondary ion mass spectrometry analysis, a hydrogen diffusion model for the TFT is established, and it is demonstrated that upside–down annealing is an effective method for preventing hydrogen depletion caused by out‐diffusion. A bottom‐gate bottom‐contact TFT is fabricated to analyze electrical characteristics. By employing different post‐thermal annealing methods on the device, it is discovered that the upside–down annealing enhances the device's performance significantly up to mobility of 22.3 cm2 V−1 s−1, which surpasses more than twice the mobility achieved with the traditionally oriented, “straight” annealed TFT.

中文翻译：

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氧化物薄膜晶体管的倒置退火及其使用氢扩散模型的分析

氢在控制氧化物薄膜晶体管（TFT）的电气特性方面发挥着至关重要的作用。可以通过控制有源层中氢的量来调节半导体的电导率。在本研究中，引入了样品反向热退火（称为“倒置退火”）。该方法对In内氢含量的影响2氧3通过氢扩散模型的透镜来检查活性层。通过飞行时间二次离子质谱分析，建立了TFT的氢扩散模型，并证明倒置退火是防止外扩散引起的氢耗尽的有效方法。制造底栅底接触 TFT 以分析电气特性。通过对器件采用不同的后热退火方法，发现倒置退火显着提高了器件的性能，迁移率高达 22.3 cm2V−1 s−1，其迁移率超过传统定向“直”退火 TFT 的两倍多。