We report a set of scanning tunneling microscopy (STM) and spectroscopy (STS) experiments studying native defects in CVT grown $1T\text{−}{\mathrm{TaS}}_2$. Six different sample surfaces from four bulk crystals were investigated. Wide area imaging reveals a prevalence of nanometer-scale electronic inhomogeneities due to native defects, with pristine regions interspersed. These inhomogeneities appear in typical as-grown crystals and coexist with a well-formed commensurate charge density wave of $1T\text{−}{\mathrm{TaS}}_2$ at low temperatures. Electronic inhomogeneities show up both as variations in the apparent height in STM and in the local density of states in STS; the bands can shift by 60 meV and the gap varies by more than 100 meV across inhomogeneities. These inhomogeneities are present in similar concentration across large-scale areas of all samples studied, but do not influence the charge density wave formation on local or global scales. The commensurate charge density wave exhibits long-range order and remains locally intact in the presence of these inhomogeneities.

中文翻译：

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1T-TaS2 中的纳米级电子不均匀性

我们报告了一组扫描隧道显微镜 (STM) 和光谱学 (STS) 实验，研究 CVT 生长中的固有缺陷$1\mathrm{时间}\text{-}{\mathrm{硫化钽}}_2$。研究了来自四种块状晶体的六种不同的样品表面。广域成像揭示了由于原生缺陷而普遍存在的纳米级电子不均匀性，原始区域散布在其中。这些不均匀性出现在典型的生长晶体中，并与形成良好的相应电荷密度波共存。$1\mathrm{时间}\text{-}{\mathrm{硫化钽}}_2$在低温下。电子不均匀性既表现为 STM 中表观高度的变化，也表现为 STS 中局域态密度的变化；能带可以移动 60 meV，并且在不均匀性上间隙变化超过 100 meV。这些不均匀性在所有研究样本的大范围区域中以相似的浓度存在，但不影响局部或全局尺度上的电荷密度波的形成。相应的电荷密度波表现出长程有序，并且在存在这些不均匀性的情况下保持局部完整。