MXene has shown great potential in electromagnetic interference (EMI) shielding field benefit due to its excellent conductivity and surface hydrophilicity. Vacancy-doped MXene can be obtained by selectively etching Al and Y of the 3D (Mo${}_{2/3}$Y${}_{1/3}$)₂AlC precursor. Introducing defects such as vacancy into MXene can reduce its weight per unit volume and realize lightweight. Herein, for the first time, the defect-containing Mo${}_{1.33}$C MXene “paper” of 3.5 $\mu$m thickness was tested as electromagnetic interference materials, showing promising results compared to other MXene and graphene-based materials.

中文翻译：

---

二维缺陷Mo1.33C（MXene）的微观结构和电磁干扰屏蔽性能

MXene 由于其优异的导电性和表面亲水性，在电磁干扰 (EMI) 屏蔽场效益方面显示出巨大潜力。空位掺杂的MXene可以通过选择性蚀刻3D（Mo）的Al和Y来获得${}_{2/3}$是${}_{1/3}$) ₂ AlC前驱体。在MXene中引入空位等缺陷可以降低其单位体积的重量，实现轻量化。在此，首次将含缺陷Mo${}_{1。33}$C MXene“论文”3.5$\mu$m厚度作为电磁干扰材料进行了测试，与其他MXene和石墨烯基材料相比，显示出有希望的结果。