Use of a flexible thermoelectric source is a feasible approach to realizing self-powered wearable electronics and the Internet of Things. Inorganic thin films are promising candidates for fabricating flexible power supply, but obtaining high-thermoelectric-performance thin films remains a big challenge. In the present work, a p-type Bi_xSb_2−xTe₃ thin film is designed with a high figure of merit of 1.11 at 393 K and exceptional flexibility (less than 5% increase in resistance after 1000 cycles of bending at a radius of ∼5 mm). The favorable comprehensive performance of the Bi_xSb_2−xTe₃ flexible thin film is due to its excellent crystallinity, optimized carrier concentration, and low elastic modulus, which have been verified by experiments and theoretical calculations. Further, a flexible device is fabricated using the prepared p-type Bi_xSb_2−xTe₃ and n-type Ag₂Se thin films. Consequently, an outstanding power density of ∼1028 μW cm⁻² is achieved at a temperature difference of 25 K. This work extends a novel concept to the fabrication of high-performance flexible thin films and devices for wearable energy harvesting.

中文翻译：

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p 型 BixSb2−xTe3 薄膜的超高热电特性，具有卓越的灵活性，适用于可穿戴能量收集

使用柔性热电源是实现自供电可穿戴电子产品和物联网的可行方法。无机薄膜是制造柔性电源的有希望的候选者，但获得高热电性能薄膜仍然是一个巨大的挑战。在目前的工作中，设计的p型 Bi _x Sb _{2− x} Te ₃薄膜在 393 K 下具有 1.11 的高品质因数和出色的柔韧性（在 1000 次弯曲循环后，电阻增加不到 5%）。半径约5毫米）。_{Bi x} Sb _{2− x} Te ₃柔性薄膜良好的综合性能归因于其优异的结晶度、优化的载流子浓度和低弹性模量，这已被实验和理论计算所验证。此外，使用所制备的p型Bi _x Sb _{2- x} Te ₃和n型Ag ₂ Se薄膜来制造柔性器件。^{因此，在 25 K 的温差下实现了~1028 μW cm -2}的出色功率密度。这项工作将一个新颖的概念扩展到高性能柔性薄膜和可穿戴能量收集设备的制造。