Molecular beam epitaxy is applied for the GaN/InGaN growth under In‐bilayer stabilized conditions, which require substrate temperatures above 580 °C for sufficient indium desorption. Under these conditions the indium content is limited to , as determined by a novel reflection high energy electron diffraction technique, which is based on indium adsorption and subsequent consumption at varying gallium flux. As‐grown structures show degraded surfaces after indium desorption. This effect is eliminated by applying excess gallium before and after InGaN growth, which results in morphologies and dislocation densities comparable to GaN/AlGaN structures.

中文翻译：

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双层稳定条件下 GaN/InGaN 异质结构的分子束外延生长

分子束外延应用于双层稳定条件下的 GaN/InGaN 生长，这需要高于 580 °C 的衬底温度才能实现足够的铟解吸。在这些条件下，通过新颖的反射高能电子衍射技术测定，铟含量被限制为，该技术基于不同镓通量下的铟吸附和随后的消耗。生长结构在铟解吸后显示出退化的表面。通过在 InGaN 生长之前和之后添加过量的镓可以消除这种影响，从而获得与 GaN/AlGaN 结构相当的形貌和位错密度。