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Corrigendum to “A complete comprehension of InGaAs capping layer deposition on InAs quantum dots by comparison of simulations, luminescence and X-ray diffraction” [J. Cryst. Growth 629 (2024) 127516]
Journal of Crystal Growth ( IF 1.8 ) Pub Date : 2024-02-29 , DOI: 10.1016/j.jcrysgro.2024.127630 Suryansh Dongre
中文翻译:
“通过模拟、发光和 X 射线衍射的比较,全面理解 InAs 量子点上 InGaAs 覆盖层沉积”的勘误 [J. 水晶。增长629(2024)127516]
更新日期:2024-02-29
Journal of Crystal Growth ( IF 1.8 ) Pub Date : 2024-02-29 , DOI: 10.1016/j.jcrysgro.2024.127630 Suryansh Dongre
中文翻译:
“通过模拟、发光和 X 射线衍射的比较,全面理解 InAs 量子点上 InGaAs 覆盖层沉积”的勘误 [J. 水晶。增长629(2024)127516]