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Exploring Multi‐Bit Logic In‐Memory with Memristive HfO2‐Based Ferroelectric Tunnel Junctions (Adv. Electron. Mater. 3/2024)
Advanced Electronic Materials ( IF 6.2 ) Pub Date : 2024-03-07 , DOI: 10.1002/aelm.202470010 Wonwoo Kho , Hyunjoo Hwang , Seung‐Eon Ahn
中文翻译:
使用忆阻 HfO2 铁电隧道结探索内存中的多位逻辑(Adv. Electron. Mater. 3/2024)
更新日期:2024-03-07
Advanced Electronic Materials ( IF 6.2 ) Pub Date : 2024-03-07 , DOI: 10.1002/aelm.202470010 Wonwoo Kho , Hyunjoo Hwang , Seung‐Eon Ahn
中文翻译:
使用忆阻 HfO2 铁电隧道结探索内存中的多位逻辑(Adv. Electron. Mater. 3/2024)