This article presents measurement circuits and a test board developed for the experimental evaluation of prototype chip samples of the Fully Differential Difference Amplifier (FDDA). The Device Under Test (DUT) is an ultra low-voltage, high performance integrated FDDA designed and fabricated in 130nm CMOS technology. The power supply voltage of the FDDA is 400mV. The measurement circuits were implemented on the test board with the fabricated FDDA chip to evaluate its main parameters and properties. In this work, we focus on evaluation of the following parameters: the input offset voltage, the common-mode rejection ratio, and the power supply rejection ratio. The test board was developed and verified. The test board error was measured to be 38.73mV. The offset voltage of the FDDA was −0.66mV. The measured FDDA gain and gain bandwidth were 48dB and 550kHz, respectively. In addition to the measurement board, a graphical user interface was also developed to simplify the control of the device under test during measurements.

中文翻译：

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评估超低压放大器 ASIC 的测量方法

本文介绍了为全差分放大器 (FDDA) 原型芯片样品的实验评估而开发的测量电路和测试板。被测器件 (DUT) 是采用 130nm CMOS 技术设计和制造的超低电压、高性能集成 FDDA。FDDA的电源电压为400mV。利用制作好的FDDA芯片在测试板上实现了测量电路，以评估其主要参数和性能。在这项工作中，我们重点评估以下参数：输入失调电压、共模抑制比和电源抑制比。测试板已开发并验证。测得测试板误差为38.73mV。FDDA的失调电压为-0.66mV。测得的 FDDA 增益和增益带宽分别为 48dB 和 550kHz。除了测量板之外，还开发了图形用户界面，以简化测量期间对被测设备的控制。