An analytical formula is obtained for the absorption coefficient of intense terahertz radiation by free electrons in a semiconductor when the main mechanism of electron scattering is spontaneous emission of polar optical phonons. The absorption coefficient is shown to increase sharply when the average energy of electron oscillations in the terahertz field exceeds the optical phonon energy.

中文翻译：

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极性半导体中自由电荷载流子对太赫兹辐射的非线性吸收

当电子散射的主要机制是极性光学声子的自发发射时，得到了半导体中自由电子对强太赫兹辐射的吸收系数的解析公式。当太赫兹场中电子振荡的平均能量超过光学声子能量时，吸收系数急剧增加。