We investigated the electrical junction properties of the layered Sb₂Te₃ film formed on Si substrates. The current−voltage characteristics of the Sb₂Te₃/n-Si heterojunction showed an ohmic properties, whereas the Sb₂Te₃/p-Si heterojunction exhibited rectifying properties with a high barrier height of 0.77 eV. The capacitance−voltage characteristics of MOS capacitors with the Sb₂Te₃ electrode indicated an effective work function of 4.44 eV for the Sb₂Te₃ film. These findings suggest that the Sb₂Te₃/Si heterostructure possesses a low conduction band offset, as inferred from the temperature dependence of the current−voltage characteristics of the Sb₂Te₃/n-Si.

中文翻译：

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Sb2Te3/Si 异质结、低势垒 Sb2Te3/n-Si 和高势垒 Sb2Te3/p-Si 结的电性能和能带排列

_{我们研究了在 Si 衬底上形成的层状 Sb 2} Te ₃薄膜的电结性能。 Sb ₂ Te ₃ /的电流-电压特性n-Si异质结表现出欧姆特性，而Sb ₂ Te ₃ /p-Si异质结表现出整流特性，势垒高度高达0.77 eV。具有Sb ₂ Te ₃电极的MOS电容器的电容-电压特性表明Sb ₂ Te ₃膜的有效功函数为4.44eV 。这些发现表明，Sb ₂ Te _{3 /Si 异质结构具有低导带偏移，正如从 Sb 2} Te ₃ / Si 的电流-电压特性的温度依赖性推断的那样。n-硅。