Ge‐rich Ge‐Sb‐Te alloy is a good candidate for future automotive applications due to its high crystallisation temperature, which allows good data retention at elevated temperatures. Crystallization in this material is governed by elemental segregation which is key to thermal stability and device performance. In this work elemental (Ge, Sb, Te) segregation is studied in situ during thermal annealing of Ge‐rich Ge‐Sb‐Te thin films using X‐ray fluorescence microscopy at ID16B beamline of ESRF with a beam size of 50 nm. Spatially resolved maps of Ge, Te and Sb fluorescence yield are monitored and statistically analysed as function of temperature/time. In all investigated samples Sb appears to segregate much less than Te and Ge, indicating a lower mobility of this element. In situ fluorescence mapping of samples doped with different amounts of carbon by ion implantation shows that carbon delays Ge and Te segregation to higher temperatures. Comparison with crystallization kinetics monitored by X‐ray diffraction shows a good correlation between the occurrence of spatially resolved chemical inhomogeneities and the appearance of crystallised phases.This article is protected by copyright. All rights reserved.

中文翻译：

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通过原位 X 射线荧光图研究富 Ge GST 薄膜中的相分离动力学

富含Ge的Ge-Sb-Te合金因其高结晶温度而成为未来汽车应用的良好候选者，可以在高温下保持良好的数据保留。这种材料的结晶受元素偏析的控制，元素偏析是热稳定性和器件性能的关键。在这项工作中，研究了元素（Ge、Sb、Te）偏析就地在 ESRF 的 ID16B 光束线上使用 X 射线荧光显微镜对富 Ge Ge-Sb-Te 薄膜进行热退火期间，光束尺寸为 50 nm。对 Ge、Te 和 Sb 荧光产量的空间分辨图进行监测和统计分析，作为温度/时间的函数。在所有研究的样品中，Sb 的偏析似乎远小于 Te 和 Ge，表明该元素的迁移率较低。原位通过离子注入掺杂不同量碳的样品的荧光图显示，碳延迟了 Ge 和 Te 偏析到更高的温度。与 X 射线衍射监测的结晶动力学比较表明，空间分辨化学不均匀性的发生与结晶相的出现之间存在良好的相关性。本文受版权保护。版权所有。