AlGaN‐based ultraviolet light‐emitting diodes (UV‐LEDs) have the advantages of mercury (Hg) pollution free, small size, high efficiency, and so on, and are widely used in military, medical, and industrial fields, which are considered to be the most promising alternative to the traditional Hg lamps. Great efforts are made over the past few decades to improve the device performance, thereby meeting the commercial production and application requirements of UV‐LEDs, which is always accompanied by a series of interesting physical topics. In this review, the recent research progress in performance of AlGaN‐based UV‐LEDs is summarized from the perspectives of electrical injection, electro‐optical conversion, and light extraction, which are responsible for the operation of devices. The detailed discussions include the major challenges, the corresponding technological breakthroughs, and also the outlook of material growth, energy band modulation, as well as device fabrication involved in UV‐LEDs, which are expected to be helpful for the thorough comprehension of device physics and further development of AlGaN‐based UV‐LEDs.

中文翻译：

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AlGaN基紫外发光二极管性能研究进展

AlGaN基紫外发光二极管（UV-LED）具有无汞（Hg）污染、体积小、效率高等优点，广泛应用于军事、医疗和工业领域，被认为成为传统汞灯最有前途的替代品。过去几十年来，人们为提高器件性能做出了巨大的努力，从而满足UV-LED的商业化生产和应用需求，这始终伴随着一系列有趣的物理课题。在这篇综述中，从负责器件运行的电注入、电光转换和光提取的角度总结了 AlGaN 基 UV-LED 性能的最新研究进展。详细讨论了UV-LED的主要挑战、相应的技术突破，以及材料生长、能带调制以及器件制造的展望，预计将有助于全面理解器件物理和器件性能。进一步开发基于AlGaN的UV-LED。