Kagome superconductors AV₃Sb₅ (A = K, Rb and Cs) have attracted much recent attention due to the coexistence of multiple exotic orders. Among them, the charge density wave (CDW) order has been shown to host various unconventional behaviors. Here, we investigate the CDW order by a combination of both bulk and surface doping methods. While element substitutions in bulk doping change both carriers and the crystal lattice, the surface doping primarily tunes the carrier concentration. As such, our results reveal a two-dimensional phase diagram of the CDW in doped CsV₃Sb₅. In the lightly bulk doped regime, the existence of CDW order is reversible by tuning the carrier concentration. But excessive bulk doping permanently destroys the CDW, regardless of the carrier doping level. These results provide insights to the origin of the CDW from both electronic and structural degrees of freedom. They also open an avenue for manipulating the exotic CDW order in Kagome superconductors.

Kagome 超导体 AV ₃ Sb ₅（A = K、Rb 和 Cs）由于多种奇异有序的共存而引起了人们的广泛关注。其中，电荷密度波（CDW）阶已被证明具有各种非常规行为。在这里，我们通过结合体掺杂和表面掺杂方法来研究 CDW 阶数。虽然体掺杂中的元素替换会改变载流子和晶格，但表面掺杂主要调节载流子浓度。_{因此，我们的结果揭示了掺杂 CsV 3} Sb ₅中 CDW 的二维相图。在轻体掺杂状态下，CDW 有序的存在可以通过调节载流子浓度来逆转。但无论载流子掺杂水平如何，过量的大量掺杂都会永久破坏 CDW。这些结果从电子和结构自由度两个方面提供了对 CDW 起源的见解。他们还为操纵 Kagome 超导体中奇异的 CDW 秩序开辟了一条途径。