In order to study the function of memristor in new devices, a new D-latch is proposed in this paper, which is composed of threshold-type memristor, transistor, resistor and NOT gate. The proposed D-latch uses fewer components than previous. The transistor controls the on-off of the signal, and NOT gate changes the resistance state of memristor. The voltage divider circuit composed of memristor and resistor realizes the latching function. To verify the D-latch, a modified threshold-type memristor emulator circuit (MEC) is proposed. The proposed MEC is composed of operational amplifier, multiplier and second-generation current conveyor. The MEC is a voltage-controlled memristor that can realize floating input. The equivalent resistance of MEC has two kinds of high resistance and low resistance, which change with the polarity of the voltage. The MEC has the characteristic of non-volatility, that is, the resistance state of the circuit remains when the input signal is withdrawn. Through simulation analysis and experimental verification, both circuits have good performance.

中文翻译：

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一种新的基于 CMOS 忆阻器的 D 锁存器，元件更少

为了研究忆阻器在新器件中的作用，本文提出了一种新型D锁存器，它由阈值型忆阻器、晶体管、电阻器和非门组成。所提出的 D 锁存器使用的组件比以前更少。晶体管控制信号的通断，非门改变忆阻器的电阻状态。由忆阻器和电阻组成的分压电路实现锁存功能。为了验证 D 锁存器，提出了一种改进的阈值型忆阻器仿真器电路 (MEC)。所提出的 MEC 由运算放大器、乘法器和第二代电流传输器组成。 MEC是压控忆阻器，可以实现浮动输入。 MEC的等效电阻有高阻和低阻两种，随电压极性而变化。 MEC具有非易失性的特点，即当输入信号撤消时，电路的电阻状态保持不变。通过仿真分析和实验验证，两种电路均具有良好的性能。