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High-Performance Al0.1Ga0.9N p-i-n Ultraviolet Avalanche Photodiodes With Ultra-Shallow Bevel Edge Terminations
IEEE Electron Device Letters ( IF 4.9 ) Pub Date : 2024-03-11 , DOI: 10.1109/led.2024.3375803 Haifan You 1 , Haiping Wang 1 , Weike Luo 2 , YiWang Wang 1 , Xinghua Liu 1 , Hai Lu 1 , Rong Zhang 1 , Youdou Zheng 1 , Dunjun Chen 1
中文翻译：
具有超浅斜角边缘端子的高性能 Al0.1Ga0.9N 引脚紫外雪崩光电二极管
更新日期：2024-03-11
IEEE Electron Device Letters ( IF 4.9 ) Pub Date : 2024-03-11 , DOI: 10.1109/led.2024.3375803 Haifan You 1 , Haiping Wang 1 , Weike Luo 2 , YiWang Wang 1 , Xinghua Liu 1 , Hai Lu 1 , Rong Zhang 1 , Youdou Zheng 1 , Dunjun Chen 1
Affiliation
中文翻译：
具有超浅斜角边缘端子的高性能 Al0.1Ga0.9N 引脚紫外雪崩光电二极管
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